메뉴 건너뛰기




Volumn 9, Issue 5, 2009, Pages 2950-2955

Onset temperature for si nanostructure growth on si substrate during high vacuum electron beam annealing

Author keywords

Annealing duration; Annealing temperature; Electron beam annealing; Onset temperature; Si nanowhiskers; Silicon nanostructures

Indexed keywords

ANNEALING TEMPERATURE; ELECTRON BEAM ANNEALING; ONSET TEMPERATURE; SI NANOWHISKERS; SILICON NANOSTRUCTURES;

EID: 67649234542     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.210     Document Type: Article
Times cited : (5)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.