Impact of inside spacer process on fully self-aligned 250 GHz SiGe:C HBTs reliability performances: a-Si vs. nitride

Microelectronics Reliability

Volumn 48, Issue 8-9, 2008, Pages 1198-1201

  Diop, M ^a,b   Revil, N ^a   Marin, M ^a   Monsieur, F ^a   Chevalier, P ^a   Ghibaudo, G ^b  

^a STMICROELECTRONICS   (France)

^b IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; HETEROJUNCTION BIPOLAR TRANSISTORS; NITRIDES; NONMETALS; SILICON; SULFATE MINERALS;

ELECTRICAL STRESSING; EMITTER-BASE JUNCTIONS; FULLY SELF-ALIGNED; HIGH SPEEDS; INTERFACE STATES; NOISE MEASUREMENTS; SELF ALIGNING; STRESS-INDUCED DEGRADATION; TCAD SIMULATIONS;

AMORPHOUS SILICON;

EID: 50249150776     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.06.045     Document Type: Article

References (6)

1. Zhang G et al. In: Proceedings of the bipolar/BiCMOS circuits and techn. meeting (BCTM); 2002. p. 32-5.
2. Chevalier P et al. In: IEEE JSSC; October 2005. p. 2025-34.
3. Hackbarth E et al. In: 44th Device research conference, IVB-1; 1986.
4. Guarin F et al. In: Proceedings of the sixth international Carribean conference on devices, circuits and systems; April 2006.
5. Rieh J.-S., et al. IEEE Trans Electron Dev 3 2 (2003)
6. Vandamme L.K.J. IEEE Trans Electron Dev 41 11 (1994) 45