From measurement to intrinsic device characteristics: Test structures and parasitic determination

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2008, Pages 232-239

  Pourchon, F ^a   Raya, C ^b   Derrier, N ^a   Chevalier, P ^a   Gloria, D ^a   Pruvost, S ^a   Celi D ^a  

^a STMICROELECTRONICS   (France)

^b UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

Bipolar modeling and simulation; De embedding; HF measurement

Indexed keywords

NETWORKS (CIRCUITS); SIGNAL PROCESSING;

BIPOLAR MODELING AND SIMULATION; DE-EMBEDDING; DEVICE MODELS; HF MEASUREMENT; INTRINSIC DEVICES; PARASITICS; SMALL SIGNALS; TEST STRUCTURES; VERY HIGH FREQUENCIES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 57949092044     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2008.4662751     Document Type: Conference Paper

References (5)

1. B. A. Floyd, "SiGe BiCMOS Transceivers for Millimiter-Wave" Short Course, IEEE BCTM, Boston, October 2007.
2. H. Cho and D. Burk, "A three step method for the de-embedding of high frequency S-parameter measurements", IEEE Trans. Electron devices, vol. 38, pp. 1371-1375, Apr-2001.
3. E. P. Vandamme et al., "Improved three step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures", IEEE Trans. Electron devices, vol. 48, pp. 737-742, Apr-2001.
4. T.E. Kolding, "A four-step method for de-embedding gigahertz on-wafer CMOS", IEEE Trans. Electron devices, vol. 47, pp. 734-740, Apr-2000.
5. G. Avenier et al., "0.13μm SiGe BiCMOS Technology for mm-Wave Applications" in Proc. BCTM08, in press.