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Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
Volumn , Issue , 2007, Pages 387-390
Low noise low cost Rx solutions for pulsed 24GHz automotive radar sensors
Author keywords

BICMOS; HBT; Low noise amplifier; Mixer; Radar; SiGe; Voltage controlled oscillator
Indexed keywords

GAIN MEASUREMENT; LOW NOISE AMPLIFIERS; MIXER CIRCUITS; RADAR SYSTEMS; SEMICONDUCTING SILICON COMPOUNDS; VARIABLE FREQUENCY OSCILLATORS;
EID: 34748882367     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2007.380907     Document Type: Conference Paper
Times cited : (16)
References (9)
  • 1
    • 4444231889 scopus 로고    scopus 로고
    • A Low-Noise Broadband SiGe Mixer for 24GHz Ultra-Wideband Automotive Applications
    • 10-13 Aug
    • I. Gresham, A. Jenkins, "A Low-Noise Broadband SiGe Mixer for 24GHz Ultra-Wideband Automotive Applications", RAWCON, 10-13 Aug. 2003, pp. 361-364.
    • (2003) RAWCON , pp. 361-364
    • Gresham, I.1    Jenkins, A.2
  • 2
    • 34748860639 scopus 로고    scopus 로고
    • J. S. Rieh, et al., SiGe HBTs for millimetre-Wave Applications with Simultaneously Optimized fT and fmax of 300GHz, MTT-S IMS Forth Worth, June 2004.
    • J. S. Rieh, et al., "SiGe HBTs for millimetre-Wave Applications with Simultaneously Optimized fT and fmax of 300GHz", MTT-S IMS Forth Worth, June 2004.
  • 3
    • 27844597797 scopus 로고    scopus 로고
    • 230 GHz self-aligned SiGeC HBT for optical and millimeter-wave applications
    • Oct
    • P. Chevalier, et al., "230 GHz self-aligned SiGeC HBT for optical and millimeter-wave applications", JSSC, vol. 40, no. 10, Oct 2005, pp. 2025-2034.
    • (2005) JSSC , vol.40 , Issue.10 , pp. 2025-2034
    • Chevalier, P.1
  • 4
    • 1042277548 scopus 로고    scopus 로고
    • A 150 GHz fT/fmax 0.13μm SiGe:C BiCMOS Technology
    • 28-30 Sept
    • M. Laurens, et al., "A 150 GHz fT/fmax 0.13μm SiGe:C BiCMOS Technology", IEEE Bipolar/BiCMOS Circuit and Technology Meeting, 28-30 Sept. 2003, pp; 199-202.
    • (2003) IEEE Bipolar/BiCMOS Circuit and Technology Meeting , pp. 199-202
    • Laurens, M.1
  • 6
    • 34748884667 scopus 로고    scopus 로고
    • ETSI EN 302-288-1 v1.1.1 (2005-01)
    • ETSI EN 302-288-1 v1.1.1 (2005-01)
  • 8
    • 34748899743 scopus 로고    scopus 로고
    • Design technique in millimeter wave range using conventional SiGe:C BiCMOS Technology
    • San Francisco, California, USA, 11-15 June
    • S. Pruvost, et al., "Design technique in millimeter wave range using conventional SiGe:C BiCMOS Technology', RFIC-IMS WSO Workshop, San Francisco, California, USA, 11-15 June 2006, WK111-4, pp 11.
    • (2006) RFIC-IMS WSO Workshop , vol.WK111-4 , pp. 11
    • Pruvost, S.1

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.