Characterization of three-terminal junctions operated as in-plane gated field-effect transistors

IEEE Transactions on Electron Devices

Volumn 56, Issue 2, 2009, Pages 306-311

  Müller, Christian R ^a   Worschech, L ^a   Hofling S ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

Nanoelectronics; Room temperature; Threeterminal junction (TTJ); Transistor characteristics

Indexed keywords

ELECTRON GAS; MODULATION; NANOELECTRONICS; PORT TERMINALS; TRANSISTORS; TWO DIMENSIONAL;

CHANNEL WIDTHS; D ELECTRONS; DEVICE CURRENTS; GAAS/ALGAAS; HETEROSTRUCTURE; IN PLANES; MASK TECHNOLOGIES; MAXIMUM TRANSCONDUCTANCES; MODULATION-DOPED; ROOM TEMPERATURE; THREETERMINAL JUNCTION (TTJ); TRANSFER CHARACTERISTICS; TRANSISTOR CHARACTERISTICS; WET-CHEMICAL ETCHINGS;

FIELD EFFECT TRANSISTORS;

EID: 59849114469     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2010571     Document Type: Article

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