Effects of geometrical fin parameters on transfer characteristics in triple-gate fin field effect transistors

Japanese Journal of Applied Physics

Volumn 48, Issue 6 PART 2, 2009, Pages

  Song, Jae Joon ^a   Moon, Dae Hyun ^a   Kim, Ohyun ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BODY TIED; CHANNEL DOPINGS; CHANNEL SEPARATION; DEVICE PARAMETERS; DOPING CONCENTRATION; FIN FIELD-EFFECT TRANSISTORS; FIN PARAMETERS; FINFETS; LONG CHANNEL DEVICES; POLYCRYSTALLINE SILICON GATES; RADIUS OF CURVATURE; ROUNDED CORNERS; THIN GATE OXIDES; THREE DIMENSIONAL DEVICE SIMULATIONS; TRANSFER CHARACTERISTICS; TRIPLE-GATE;

FINS (HEAT EXCHANGE); GATE DIELECTRICS; POLYSILICON; THRESHOLD VOLTAGE; VOLTAGE REGULATORS;

FIELD EFFECT TRANSISTORS;

EID: 70249115605     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.06FD09     Document Type: Article

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