PMOS body-tied FinFET (Omega MOSFET) characteristics

Device Research Conference - Conference Digest, DRC

Volumn 2003-January, Issue , 2003, Pages 33-34

  Park, T ^a,b   Park, D ^a   Chung, J H ^a   Yoon, E J ^a   Kim, S M ^a   Cho, H J ^a   Choe, J D ^a   Choi, J H ^a   Yoon, B M ^a   Han, J J ^a   Kim, B H ^a   Choi, S ^a   Kim, K ^a   Yoon, E ^b   Lee, J H ^c  

^a SAMSUNG Electronics   (South Korea)

^b Seoul National University   (South Korea)

^c Kyungpook National University   (South Korea)

Author keywords

Etching; FinFETs; Ion implantation; MOSFET circuits; Oxidation; Random access memory; Resists; Scanning electron microscopy; Silicon compounds; Transmission electron microscopy

Indexed keywords

ELECTRON MICROSCOPY; ETCHING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTEGRATED CIRCUITS; ION IMPLANTATION; OXIDATION; RANDOM ACCESS STORAGE; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; STATIC RANDOM ACCESS STORAGE; TRANSMISSION ELECTRON MICROSCOPY;

BODY TIED; FINFETS; MOS-FET; MOSFET CIRCUITS; ON CURRENTS; PMOS TRANSISTORS; RANDOM ACCESS MEMORY; RESISTS;

MOSFET DEVICES;

EID: 84942567719     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2003.1226858     Document Type: Conference Paper

References (4)

1. J. Kedzierski et al., IEDM Tech. Dig., p. 247, 2002.
2. B. Yu et al., IEDM Tech. Dig., p. 251, 2002.
3. F.-L. Yang et al., IEDM Tech. Dig., p. 255, 2002.
4. T. Park et al., submitted for the Symposium on VLSI Technology, Kyoto, 2003.