Organic memory device based on 3, 3′ -bis-(3,5-di-tert-butyl-4- methoxyphenyl)- 2, 2′ -bithiophene with high endurance and robustness to ambient air operation

Applied Physics Letters

Volumn 89, Issue 24, 2006, Pages

  Caironi, M ^a   Natali, D ^a   Sampietro, M ^a   Bertarelli, C ^a   Bianco, A ^a   Dundulachi, A ^a   Canesi, E ^a   Zerbi, G ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC CONTACTS; ELECTRIC FIELD EFFECTS; MERCURY (METAL); ROBUSTNESS (CONTROL SYSTEMS); STORAGE ALLOCATION (COMPUTER); SWITCHING FUNCTIONS; THRESHOLD VOLTAGE;

AMBIENT AIR OPERATION; ELECTRICAL STRESS; METAL CONTACTS; ORGANIC MEMORY DEVICES;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 33845778459     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2408656     Document Type: Article

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