GaAsSbN/GaAs long wavelength PIN detectors

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2008, Pages

  Chen, Chi Kuang ^a   Ma, Ta Chun ^a   Lin, Yan Ting ^a   Lin, Hao Hsiung ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Dilute nitrides; GaAsSbN; Photodetctor

Indexed keywords

ACCEPTOR CONCENTRATIONS; CONDUCTION TYPE; CUTOFF WAVELENGTHS; DEVICE CHARACTERISTICS; DILUTE NITRIDES; GAASSBN; HOMOJUNCTION; LONG WAVELENGTH; PHOTODETCTOR; PIN DETECTOR; THERMAL TREATMENT; THERMAL-ANNEALING;

DETECTORS; HEAT TREATMENT; HETEROJUNCTIONS; INDIUM; INDIUM PHOSPHIDE; NITRIDES; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM EFFICIENCY;

EID: 70149121964     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2008.4703012     Document Type: Conference Paper

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