A new technique to extract the source/drain series resistance of MOSFETs

IEEE Electron Device Letters

Volumn 30, Issue 9, 2009, Pages 975-977

  Fleury, Dominique ^a,b   Cros, Antoine ^a   Bidal, Grégory ^a,b   Rosa, Julien ^a   Ghibaudo, Gérard ^b  

^a STMICROELECTRONICS   (France)

^b MINATEC   (France)

Author keywords

Measurement; MOSFET; Series resistance

Indexed keywords

CHANNEL LENGTH; EFFECTIVE LENGTH; FAST MEASUREMENT; FULLY DEPLETED SOI; METAL GATE; MOBILITY VARIATION; MOSFET; MOSFETS; SERIES RESISTANCE; SOURCE/DRAIN SERIES RESISTANCES; STATISTICAL ANALYSIS; TOTAL RESISTANCE;

ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; SILICON ON INSULATOR TECHNOLOGY; SMELTING;

MOSFET DEVICES;

EID: 69949188391     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2026592     Document Type: Article

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