A simple method to extract source/drain series resistance for advanced MOSFETs

IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Volumn , Issue , 2007, Pages 87-90

  Chang, Y H ^a   Wu, Y F ^a   Ho, C S ^b  

^a NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b ProMOS Technologies Inc   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN SERIES RESISTANCE; GATE LENGTHS; GATE-BIAS DEPENDENT SOURCE;

CIRCUIT SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; ELECTRIC RESISTANCE MEASUREMENT; GATE DIELECTRICS;

MOSFET DEVICES;

EID: 43049183182     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2007.4450068     Document Type: Conference Paper

References (8)

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