A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2006, Pages 143-144

  Chen, William P N ^a,b   Su, P ^a   Wang, J S ^a   Lien, C H ^a   Chang, C H ^b   Goto, K ^b   Diaz, C H ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34047240287     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2006.251104     Document Type: Conference Paper

References (7)

1. Y. Taur and Tak H. Ning, "Fundamentals of Modern VLSI Devices," Cambridge University Press, 1998.
2. D. Esseni et al., IEEE Electron Device Lett., vol. 19, p.131, 1998.
3. Y. Taur, IEEE Trans. Electron Devices, vol.47, p.160, 2000.
4. Hans van Meer et al., IEEE Electron Device Lett., vol. 21, p. 133, 2000.
5. K. Goto et al., IEDM Tech. Dig., p. 623, 2003.
6. S.K.H. Fung et al., Symp. VLSI Tech., p. 92, 2004.
7. Y. Cheng and C. Hu, "MOSFET Modeling & BSIM3 User's Guide," KAP 1999.