Fully-depleted SOI CMOS technology using WxN metal gate and HfSixOyNz high-k dielectric

ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

Volumn 2007, Issue , 2007, Pages 255-258

  Aime D ^a   Fenouillet Beranger, C ^b   Perreau, P ^b   Denorme, S ^c   Coignus, J ^c   Cros, A ^c   Fleury, D ^c   Faynot, O ^b   Vandooren, A ^a   Gassilloud, R ^c   Martin, F ^b   Barnola, S ^b   Salvetat, T ^b   Chabanne, G ^c   Brevard, L ^b   Aminpur, M ^a   Leverd, F ^c   Gwoziecki, R ^b   Boeuf, F ^c   Hobbs, C ^a   Zauner, A ^d   Muller M ^d   Cosnier, V ^c   Minoret, S ^b   Bensahel, D ^c   Orlowski, M ^a   Mingam, H ^c   Wild, A ^a   Deleonibus, S ^b   Skotnicki, T ^c   more..

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b CEA LETI   (France)

^c STMICROELECTRONICS   (France)

^d NXP SEMICONDUCTORS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; HAFNIUM COMPOUNDS; MOS DEVICES; SILICON ON INSULATOR TECHNOLOGY; TITANIUM NITRIDE; ULTRATHIN FILMS;

LOW POWER APPLICATIONS; METAL GATE;

CMOS INTEGRATED CIRCUITS;

EID: 39549106235     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2007.4430926     Document Type: Conference Paper

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