Insights on trap generation and breakdown in ultra thin SiO2 and SiON dielectrics from low voltage stress-induced leakage current measurements

Microelectronics Reliability

Volumn 48, Issue 8-9, 2008, Pages 1171-1177

  Nicollian, Paul E ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS;

ELECTRICAL STRESSING; INTERFACE STATES; LOW VOLTAGES; TRAP GENERATION;

SILICON COMPOUNDS;

EID: 50249161938     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.07.011     Document Type: Article

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