Microstructured optical arrays for smart x-ray optics

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7360, Issue , 2009, Pages

  Dunare, Camelia ^a   Parkes, William ^a   Stevenson, Tom ^a   Michette, Alan ^b   Pfauntsch, Slawka ^b   Sahraei, Shahin ^b   Shand, Matthew ^b   Zhang, Dou ^c   Rodriguez Sanmartin, Daniel ^c   Button, Tim ^c   Feldman, Charlotte ^d   Willingale, Richard ^d   Doel, Peter ^e   Wang, Hongchang ^e   James, Ady ^f  

^a UNIVERSITY OF EDINBURGH   (United Kingdom)

^b KING'S COLLEGE LONDON   (United Kingdom)

^c UNIVERSITY OF BIRMINGHAM   (United Kingdom)

^d UNIVERSITY OF LEICESTER   (United Kingdom)

^e UNIVERSITY COLLEGE LONDON   (United Kingdom)

^f UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

Bosch process; Crystal planes; Deep etch; MOA; Roughness; TMAH solution; X ray

Indexed keywords

BOSCH PROCESS; CRYSTAL PLANES; DEEP ETCH; MOA; ROUGHNESS; TMAH SOLUTION;

AMMONIUM COMPOUNDS; ASPECT RATIO; CHROMIUM; CMOS INTEGRATED CIRCUITS; DRY ETCHING; INDUCTIVELY COUPLED PLASMA; INTEGRATED CIRCUITS; MOS CAPACITORS; PIEZOELECTRIC TRANSDUCERS; PLASMA ETCHING; REACTIVE ION ETCHING; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; ULTRAVIOLET DEVICES; WET ETCHING; X RAY OPTICS;

X RAYS;

EID: 69949167982     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.820598     Document Type: Conference Paper

References (17)

1. Michette, A., Button, T., Dunare, C., Feldman, C., Folkard, M., Hart, D., McFaul, C., Morrison, G.R., Parkes, W., Pfauntsch. S., Powell, A.K., Rodriguez-Sanmartin, D., Sahraei, S., Stevenson, T., Vojnovic, R., Willingale, D., Zhang, D., "Active micro-structured arrays for X-ray oprics", Advances in X-Ray/EUV Optics and Components II. Edited by Khounsary, Ali M.; Morawe, Christian; Goto, Shunji. Proceedings of the SPIE, Volume 6705, pp. 670502 (2007).
2. Willingale, R., Feldman, C., Michette, A., Button, T., Dunare, C., Folkard, M., Hart, D., McFaul, C., Morrison, G., Parkes, W., Pfauntsch, S., Powell, A., Rodriguez, D., Sahraei S., Stevenson, T., Vojnovic, B., and Zhang, D., "Active Micro-structured Optical Arrays of grazing incidence reflectors", Journal for X-ray Optical Instruments, in press.
3. Zhang, D., Rodriguez-Sanmartin, D., Button, T., Atkins, C., Brooks, D., Doel, P., Dunare, C., Feldman, C., James, A., Michette, A., Parkes, W., Pfauntsch, S., Sahraei, S., Stevenson, T., Wang, H., Willingale, R., "Development of piezoelectric actuators for active X-ray optics", J.Electrochem., tbp, (2009).
4. Laermer, F., Schil, A., "Method of anisotropically etching silicon, Robert Bosch GMBH: US Patent 5501893.
5. Holke, A., Thurman-Henderson, H., "Ultra-deep Anisotropic Etching of (110) Silicon", J. Micromech. Microeng., 9, 51-57, (1999).
6. Lee D.B., "Anisotropic Etching of Silicon", Journal of Applied Physics, Vol.40, 4569-4574, (1969).
7. Wind, R.A., Hines, M.A., "Microscopic etch anisotropies and microscopic reaction mechanism: a micromachined structure for the rapid assay of etchant anisotropy", Elsevier, Surface Science, 460, 21-38, (2000).
8. Aayon, A.A., Braff, R., Lin, C.C., Sawin, H.H., Schmidt, M.A., "Characterization of a time multiplexed inductively coupled plasma etcher", J.of Electrochem. Soc., 146 (1), 339-349, (1999).
9. Aayon, A.A., Zhang, X., Khanna, R., "Anisotropic silicon trench 300-500ìm deep employing time multiplexed deep etching (TMDE)", Sensors and Actuators, A 91, 381-385, (2001).
10. Kuribayashi, H., Hiruta, R., Shimizu, R., "Shape transformation of silicon trenches during hydrogen annealing", J.Vac. Sci. Technol., A 21 (4), 1279-1283 (2003).
11. Bean, K.E., "Anisotropic Etching of Silicon", IEEE Trans. Electron Devices, ED-25, 1185, (1978).
12. Seidel, H., Csepregi, L., Heuberber, A., "Anisotropic etching of crystalline silicon in alkaline solutions", J. Electrochem. Soc., 137(11), 3612-3632, (1990).
13. Sato, K., Shikida, M., Matsushima, Y., Yamashiro, T., Asaumi, K., Iriye, Y., Yamamoto, M., "Characterisation of orientation-dependant etching properties of single-crystal .ssilicon: effects of KOH concentration", Sensor and actuators, A 64, 87-93, (1998).
14. Tabata, O., Asahi, R., Funabashi, H., Shimaoka, K., Sugyiama, S., "Anisotropic etching of silicon in TMAH solutions", Sensor and Actuators, A 34, 51-57. (1992).
15. Strateikina, I., Elalamy, M.Z., Ladnsberger, L.M., Kahrizi, M., "Analysis of step based silicon surface at facet boundaries during wet anisotropic etching", J.Vac.Sci. Technol., A 22 (3), 1073-1078, (2004).
16. James, T.D., Parish, G., Winchester, K.J., Musca, C.A., "A crystallographic alignment method in silicon for deep, long microchannel fabrication", J. Micromech. Microeng., 16, 2177-2182, (2006).
17. Fu, Y. Q., Colli, A., Fasoli, A., Luo, J. K., Flewitt, A. J., Ferrari, A. C., Milne, W. I., "Deep reactive ion etching as a tool for nanostructure fabrication", J.Vac.Sci.Tehnol., B27(3), in press for May/June, (2009).