Analysis of step-based silicon surfaces at facet boundaries during wet anisotropic etching

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 3, 2004, Pages 1073-1078

  Stateikina, I ^a   Elalamy, M Z ^a   Landsberger, L M ^a   Kahrizi, M ^a  

^a Dept of Electrical and Computer Engineering   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; MATHEMATICAL MODELS; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON WAFERS; SURFACE PROPERTIES; SURFACE ROUGHNESS;

ETCH RATES; ETCHANTS; FACET BOUNDARIES; WET ANISOTROPIC ETCHING;

ETCHING;

EID: 3142647781     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1691078     Document Type: Conference Paper

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