Trap-free process and thermal limitations on large-periphery SiC MESFET for RF and microwave power

IEEE Transactions on Microwave Theory and Techniques

Volumn 51, Issue 4 I, 2003, Pages 1129-1134

  Villard, Frédéric ^a   Prigent, J P ^b   Morvan, E ^c   Dua, C ^c   Brylinski, C ^c   Temcamani, F ^a   Pouvil, P ^a  

^a ENSEA   (France)

^b THALES COMMUNICATIONS   (France)

^c THALES RESEARCH AND TECHNOLOGY   (France)

Author keywords

MESFET; Self heating; Silicon carbide (SiC); Trapping

Indexed keywords

HEATING; MICROWAVES; SILICON CARBIDE; SUBSTRATES;

SELF-HEATING;

MESFET DEVICES;

EID: 0242586045     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2003.809678     Document Type: Article

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