High voltage (3130 V) 4H-SiC lateral p-n diodes on a semiinsulating substrate

IEEE Electron Device Letters

Volumn 29, Issue 1, 2008, Pages 83-85

  Huang, Chih Fang ^a   Kuo, Jin Rong ^a   Tsai, Chih Chung ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

4H SiC; Diode; High voltage; Lateral; Semiinsulating Substrate; Superjunction

Indexed keywords

ANODES; ELECTRIC POTENTIAL; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

BLOCKING VOLTAGE; LATERAL P-N DIODES; SEMIINSULATING SUBSTRATE; SUPERJUNCTION;

SEMICONDUCTOR DIODES;

EID: 37549002068     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.910756     Document Type: Article

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