Effect of surface treatment on electrical properties of AlGaAs/GaAs heterojunction bipolar transistor

Solid-State Electronics

Volumn 49, Issue 8, 2005, Pages 1335-1340

  Baek, C H ^a   Oh, T K ^a   Kang, B K ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

1 f noise; Heterojunction bipolar transistor; Ideality factor; Maximum oscillation frequency; Surface treatment

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; OSCILLATIONS; PLASMAS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE TREATMENT;

1/F NOISE; BASE RESISTANCE; IDEALITY FACTOR; MAXIMUM OSCILLATION FREQUENCY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 24144501095     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.06.014     Document Type: Article

References (14)

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