GaAs-, InP- and GaN HEMT-based microwave control devices: What is best and why

Microwave Journal

Volumn 48, Issue 5, 2005, Pages 164-180

  Kameche, M ^a   Drozdovski, N V ^b,c  

^a Centre National des Techniques Spatiale Oran   (Algeria)

^b ETEC   (Netherlands)

^c EUROPEAN SPACE AGENCY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL MODULATION; MICROWAVE CONTROL; MICROWAVE CONTROL DEVICES; SOLID-STATE SWITCHES;

CHANNEL CAPACITY; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE DEVICES; SATELLITE COMMUNICATION SYSTEMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SIGNAL RECEIVERS; TRANSMITTERS;

SEMICONDUCTOR SWITCHES;

EID: 22944440388     PISSN: 01926225     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Review

References (13)

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