Optical, chemical and depth characterization of Al/SiC periodic multilayers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7360, Issue , 2009, Pages

  Jonnard, P ^a   Le Guen, K ^a   Hu, M H ^a   Andre J M ^a   Meltchakov, E ^b   Hecquet, C ^b   Delmotte, F ^b   Galtayries, A ^c  

^a SORBONNE UNIVERSITÉ   (France)

^b UNIV PARIS SUD   (France)

^c CNRS   (France)

Author keywords

Periodic multilayer; Time of flight secondary ion mass spectrometry; X ray emission; X ray reflectivity

Indexed keywords

CHEMICAL STATE; DEPTH PROFILE; EMISSION BANDS; GEOMETRICAL PARAMETERS; INTERFACIAL REACTIONS; INTERFACIAL ROUGHNESS; OPTICAL APPLICATIONS; PERIODIC MULTILAYER; PERIODIC MULTILAYERS; SI ATOMS; THIN LAYERS; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY; TOF SIMS; X RAY EMISSION SPECTROSCOPY; X-RAY EMISSION; X-RAY REFLECTIVITY;

ALUMINUM; ATOMIC SPECTROSCOPY; CRYSTAL ATOMIC STRUCTURE; ELECTROMAGNETIC WAVE EMISSION; EMISSION SPECTROSCOPY; ION BEAMS; IONS; MASS SPECTROMETERS; MULTILAYERS; OPTICAL MULTILAYERS; POSITION CONTROL; REFLECTION; REFRACTORY METALS; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; SPECTROMETRY; ULTRAVIOLET DEVICES; X RAY DIFFRACTION; X RAY OPTICS; X RAY SCATTERING; X RAYS;

PERIODIC STRUCTURES;

EID: 69949121225     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.820913     Document Type: Conference Paper

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