Analysis of a B4C/Mo/Si multilayer interferential mirror by SIMS: Influence of the sputtering ion

Surface and Interface Analysis

Volumn 38, Issue 4, 2006, Pages 781-783

  Maury, H ^a   Holliger, P ^b   Fares B ^c   Gautier, J ^d   Roulliay, M ^d   Bridou, F ^d   Delmotte, F ^d   Ravet, M F ^d   Andre J M ^a   Jonnard, P ^a,e  

^a SORBONNE UNIVERSITÉ   (France)

^b CEA LETI   (France)

^c INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^d UNIV PARIS SUD   (France)

^e Lab Chim Phys Matiere/Rayon   (France)

Author keywords

Boron carbide; Ion etching; Molybdenum; Multiplayer; Silicon; SIMS

Indexed keywords

BORON CARBIDE; DIFFUSION; MAGNETRON SPUTTERING; MOLYBDENUM; MULTILAYERS; REACTIVE ION ETCHING; SILICON;

BOMBARDMENT; ION ETCHING; SECONDARY ION MASS SPECTROMETRY (SIMS); SPUTTERING IONS;

SOLID STATE PHYSICS;

EID: 33646567831     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2154     Document Type: Conference Paper

References (9)

1. Ohishi N, Yanagisawa H, Sagasaki K, Abe Y. Electron. Comm. jpn, Part 2 2001; 84: 71.
2. Gautier J, Delmotte F, Roulliay M, Bridou F, Ravet MF, Jérome A. Appl. Opt. 2005; 44: 384.
3. Bridou F, Pardo B. J. Opt. 1990; 21: 183.
4. Holliger P, Laugier F, Dupuy JC. Surf. Interface Anal. 2002; 34: 472.
5. Gao Y, Marie Y, Saldi F, Migeon HN. Secondary Ion Mass Spectrometry IX. Wiley, New-York, 1994; 382.
6. Bieck W, Gnaser H, Migeon HN. Secondary Ion Mass Spectrometry XII, Elsevier, Amsterdam, 2000; 119.
7. Anderle M, Barozzi M, Bersani M, Giubertoni D, Lazerri P. Proceedings of the Characterization and Metrology for USLI Technology: 2003 International Conference, Seiler DC, Diebold AC, Shaffner TJ, McDonald R, Zollner S, Khosla RP, Secula EM (eds). AIP Conf. Proc. 2003; 683: 695.
8. Kessels MJH, Bijkerk F, Tichelaar FD, Verhoeven J. J. Appl. Phys. 2005; 97: 093 513.
9. Jonnard P, André JM, Gauthier J, Rouillay M, Bridou F, Delmotte F, Ravet MF. J. Phys. IV 2004; 118: 231.