Enhanced gate induced drain leakage current in HfO2 MOSFETs

Microelectronic Engineering

Volumn 86, Issue 11, 2009, Pages 2157-2160

  Gurfinkel, Moshe ^a   Suehle, John S ^b   Shapira, Yoram ^a  

^a TEL AVIV UNIVERSITY   (Israel)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Gate Induced Drain Leakage (GIDL); High Dielectrics; Substrate current

Indexed keywords

BAND TO BAND TUNNELING; ELECTRICAL MEASUREMENT; GATE BIAS; GATE INDUCED DRAIN LEAKAGE (GIDL); GATE INDUCED DRAIN LEAKAGE CURRENTS; GATE INDUCED DRAIN LEAKAGES; HIGH GATE BIAS; I - V CURVE; LATERAL ELECTRIC FIELD; MOSFETS; OXIDE CHARGING; SUBSTRATE CURRENT; TRANSITION LAYERS; VALENCE-BAND ELECTRONS;

DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRIC FIELDS; GATE DIELECTRICS; HAFNIUM COMPOUNDS; IMPACT IONIZATION; MOSFET DEVICES; SILICON COMPOUNDS; SUBSTRATES; TUNNELING (EXCAVATION); WIND TUNNELS;

DRAIN CURRENT;

EID: 69649100373     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.02.029     Document Type: Article

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