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Quantitative confirmation was done by the fractal analysis of the islands shown in Figs. 2 3. Complexity of an island boundary can be quantified by the exponent D of the equation P=A SD/2, where P, S, D, and A are the perimeter length, area, fractal dimension, and proportion constant, respectively. As D decreases, the island boundary looks more straightened. The nickel oxide islands in the as-grown film of Θ=0.5 [shown in Fig. 2] and those in the annealed one [shown in Fig. 3] give D=1.75 and 1.45, respectively.
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Quantitative confirmation was done by the fractal analysis of the islands shown in Figs. 2 3. Complexity of an island boundary can be quantified by the exponent D of the equation P=A SD/2, where P, S, D, and A are the perimeter length, area, fractal dimension, and proportion constant, respectively. As D decreases, the island boundary looks more straightened. The nickel oxide islands in the as-grown film of Θ=0.5 [shown in Fig. 2] and those in the annealed one [shown in Fig. 3] give D=1.75 and 1.45, respectively.
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Note that there were theoretical predictions for the development of a surface state at ∼0.6eV above EF (refer to 41, 42). However, our work, as well as earlier experimental work (refer to 23), could not confirm the existence of this predicted surface state.
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Dufour, G.5
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51
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69549102323
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The current density of Ar+ ions in our sputtering system is 61μA/ cm2 at the sample surface. With the same condition, 30 min of sputtering was sufficient to remove 1.5 ML NiO film grown on single crystal Ag(001) by EBE. For the total sputtering time, i.e., 5 hours, the Ar ion fluence was about 7× 104 nm-2. The ion fluence at the sample surface is defined as (ion flux) × (time). Since the sputter yield of Ag is ∼5.5 atoms per Ar+ ion (refer to 49), the thickness of Ag(001) single crystal, removed by the sputtering, was estimated to be ∼6.5μm.
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The current density of Ar+ ions in our sputtering system is 61μA/ cm2 at the sample surface. With the same condition, 30 min of sputtering was sufficient to remove 1.5 ML NiO film grown on single crystal Ag(001) by EBE. For the total sputtering time, i.e., 5 hours, the Ar ion fluence was about 7× 104 nm-2. The ion fluence at the sample surface is defined as (ion flux) × (time). Since the sputter yield of Ag is ∼5.5 atoms per Ar+ ion (refer to 49), the thickness of Ag(001) single crystal, removed by the sputtering, was estimated to be ∼6.5μm.
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52
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69549136364
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Morita, K.7
Shimizu, R.8
Tawara, H.9
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53
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The spectra denoted by the black curves are those from the 0.5 ML nickel oxide film grown by EBE, which showed the well-known p (2×1) reconstructed structure. Since the p (2×1) reconstructed structure retains the 1:1 stoichiometry of Ni and O, the spectral intensity of the sputtered and annealed surface relative to that of p (2×1) structure can be used to estimate the amount of atomic species.
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The spectra denoted by the black curves are those from the 0.5 ML nickel oxide film grown by EBE, which showed the well-known p (2×1) reconstructed structure. Since the p (2×1) reconstructed structure retains the 1:1 stoichiometry of Ni and O, the spectral intensity of the sputtered and annealed surface relative to that of p (2×1) structure can be used to estimate the amount of atomic species.
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