Anodic current and temperature dependence of light-emitting properties of porous Si

Journal of the Electrochemical Society

Volumn 156, Issue 10, 2009, Pages

  Tamura, Tomoyuki ^a   Aisyah, Aznur ^a   Adachi, Sadao ^a  

^a GUNMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; AMORPHOUS SUBSTANCES; ANODIC CURRENT DENSITY; ANODIC CURRENTS; ANODIC ETCHING; COMPREHENSIVE STUDIES; COORDINATE MODELS; EMISSION MECHANISM; HIGH-TEMPERATURE EMISSION; HIGHER TEMPERATURES; LOW TEMPERATURES; MOMENTUM CONSERVATIONS; MULTIPLE-PEAK; NANOCRYSTALLINES; OPTICAL SPECTRA; P-SI LAYERS; PL EMISSION; PL EXCITATIONS; PL SPECTRA; POROUS SI; QUANTUM-CONFINEMENT EFFECTS; RESONANCE BAND; SHORT RANGE ORDERS; TEMPERATURE DEPENDENCE; XPS DATA;

EMISSION SPECTROSCOPY; LIGHT EMISSION; LIGHT TRANSMISSION; POROUS SILICON;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 69549091868     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3190482     Document Type: Article

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