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Journal of Applied Electrochemistry

Volumn 36, Issue 9, 2006, Pages 999-1003

Photoluminescence properties of porous silicon layers prepared by electrochemical etching in extremely dilute HF solutions

(1) Koyama, Hideki a

a HYOGO UNIVERSITY OF TEACHER EDUCATION (Japan)

Author keywords

Anodization; Etching; Nanocrystal; Nanostructure; Photoluminescence; Porous silicon

Indexed keywords

CURRENT DENSITY; ETCHING; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SILICA; SILICON WAFERS;

ANODIZATION; ETCHING CURRENT DENSITY; NANOCRYSTAL; POROUS SILICON (PSI) LAYERS;

POROUS SILICON;

EID: 33747163274 PISSN: 0021891X EISSN: None Source Type: Journal
DOI: 10.1007/s10800-006-9165-4 Document Type: Article

Times cited : (10)

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