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Volumn 77, Issue 4, 1996, Pages 763-766

Influence of quantum confinement on the critical points of the band structure of Si

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Indexed keywords


EID: 0001187134     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.77.763     Document Type: Article
Times cited : (52)

References (15)
  • 1
    • 0003395029 scopus 로고
    • New Series, Group III, Pt. a (Springer-Verlag, Heidelberg
    • Physics of Group IV Elements and III-V Compounds, O. Madelung, Landolt Börnstein, New Series, Group III, Vol. 17, Pt. a (Springer-Verlag, Heidelberg, 1982).
    • (1982) , vol.17
    • Madelung, O.1    Börnstein, L.2
  • 2
    • 0001399219 scopus 로고
    • PHRVAO
    • R. J. Elliot, Phys. Rev., 106, 1384 (1957).PHRVAO
    • (1957) Phys. Rev. , vol.106 , pp. 1384
    • Elliot, R.J.1
  • 6
    • 0003735093 scopus 로고    scopus 로고
    • Z. C. Feng and R. Tsu (World Scientific, Singapore
    • C. Pickering, in Porous Silicon, Z. C. Feng and R. Tsu (World Scientific, Singapore, 1994).
    • Porous Silicon , pp. 1994
    • Pickering, C.1
  • 7
    • 0011575377 scopus 로고
    • R. Dingle (Academic Press, New York, Chap
    • C. Weisbuch, in Semiconductors and Semimetals, Vol. 24 R. Dingle (Academic Press, New York, 1982), Chap. 1.
    • (1982) Semiconductors and Semimetals , vol.24 , pp. 1
    • Weisbuch, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.