Effects of wet etching on photoluminescence of porous silicon

Journal of the Electrochemical Society

Volumn 147, Issue 2, 2000, Pages 602-605

  Monguchi, T ^a,b   Fujioka, H ^a   Ono, K ^a   Baba, Y ^a   Oshima, M ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTROSCOPY; ETCHING; OXIDATION; PHOTOLUMINESCENCE; SURFACE PHENOMENA; TEMPERATURE;

BANDGAP; SILICON CRYSTAL; SURFACE OXIDE; WET ETCHING; X RAY ABSORPTION;

POROUS SILICON;

EID: 0034140497     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393240     Document Type: Article

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