Optimized materials properties for organosilicate glasses produced by plasma-enhanced chemical vapor deposition

Materials Research Society Symposium - Proceedings

Volumn 766, Issue , 2003, Pages 321-326

  O'Neill, M L ^a   Vrtis, R N ^a   Vincent, J L ^a   Lukas, A S ^a   Karwacki, E J ^a   Peterson, B K ^a   Bitner, M D ^a  

^a AIR PRODUCTS AND CHEMICALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FUSED SILICA; INDENTATION; MEASUREMENT ERRORS; OPTICAL VARIABLES MEASUREMENT; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFLECTOMETERS; REFRACTIVE INDEX; STATISTICAL METHODS; STRENGTH OF MATERIALS; THICKNESS MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

NANOINDENTATION; ORGANOSILICATE GLASS; STANDARD DEVIATION;

DIELECTRIC FILMS;

EID: 0347569344     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-766-e8.17     Document Type: Conference Paper

References (7)

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3. Wu, G., Gleason, K.K., Plasma-Enhanced Chemical Vapor Deposition of Low k Dielectric Films using Methylsilane, Dimethylsilane, and Trimethylsilane Precursors. J. Vac. Sci., A 21(2)
4. MacWilliams, K., et al., Low k Material Optimization. IEEE Proc., 2001: p. 203-205.
5. Sugahara, S., et al, Preparation and Characterization of Low-k silica Film Incorporated with Methylene Groups, J. Electrochemical Soc., 148(6), 2001, F120-126.
6. Grill, A., Edelstein, D., Patel, V., SiCOH Dielectrics: From Low-k to Ultralow-k by PECVD, Advanced Metalization Conference 2001, p. 253-259.
7. O'Neill, M.L., et al, Low k Materials by Design, Semiconductor International, June 2002, p. 93.