Evaluation of AlGaInP LEDs reliability based on accelerated tests

Microelectronics Reliability

Volumn 49, Issue 9-11, 2009, Pages 1240-1243

  Nogueira, E ^a   Vazquez M ^a   Nunez N ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ENERGY EFFICIENCY; GALLIUM ALLOYS; III-V SEMICONDUCTORS; INDIUM ALLOYS; SEMICONDUCTOR ALLOYS; TRAFFIC SIGNALS;

ACCELERATED TESTS; EXTREME TEMPERATURES; FAILURE MECHANISM; INCANDESCENT BULBS; LOW-POWER CONSUMPTION; OUTDOOR ENVIRONMENT; RELIABILITY-BASED; STRESS CONDITION;

LIGHT EMITTING DIODES;

EID: 69249209730     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.06.031     Document Type: Article

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