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Journal of Materials Science: Materials in Electronics

Volumn 19, Issue SUPPL. 1, 2008, Pages

Influence of doping on the reliability of AlGaInP LEDs

(7) Altieri Weimar, Paola a Jaeger, Arndt a Lutz, Thomas a Stauss, Peter a Streubel, Klaus a Thonke, Klaus b Sauer, Rolf b

a OSRAM OPTO SEMICONDUCTORS GMBH (Germany)

b UNIVERSITY OF ULM (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYERS; AGING BEHAVIORS; ALGAINP; DEEP LEVELS; DEEP TRAPS; DEGRADATION PROCESSING; DEVICE DEGRADATION; HIGH STRESS; LIGHT OUTPUT; NON-RADIATIVE RECOMBINATIONS; OXYGEN INCORPORATION; TRANSIENT SPECTROSCOPY;

CHEMICAL ACTIVATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEGRADATION; ELECTROMAGNETIC WAVES; LIGHT EMITTING DIODES; MAGNESIUM; OXYGEN; TELLURIUM; TELLURIUM COMPOUNDS;

ACTIVATION ENERGY;

EID: 53649095209 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-008-9575-7 Document Type: Article

Times cited : (23)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.