SCOPUS 정보 검색 플랫폼

Electrochemical and Solid-State Letters

Volumn 7, Issue 11, 2004, Pages

Effect of Ni thickness dependence on NiSi FUSI metal gate characteristics

(4) Wen, H C a Sim, J H a Lu, J P b Kwong, D L a

a The University of Texas at Austin (United States)

b TEXAS INSTRUMENTS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTROCHEMICAL ELECTRODES; NICKEL; POLYSILICON; SILICA; X RAY DIFFRACTION ANALYSIS;

GATE SHEET RESISTANCE; PROCESS COMPLEXITY; SILICIDATION;

GATES (TRANSISTOR);

EID: 10044294873 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.1804983 Document Type: Article

Times cited : (7)

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