Background charge fluctuation in a GaAs quantum dot device

Applied Physics Letters

Volumn 85, Issue 5, 2004, Pages 768-770

  Jung, S W ^a,b   Fujisawa, T ^a,c   Hirayama, Y ^a,d   Jeong, Y H ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ELECTRIC CHARGE; ELECTRIC EXCITATION; ELECTRON TRAPS; ENERGY TRANSFER; FERMI LEVEL; PARAMETER ESTIMATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SPURIOUS SIGNAL NOISE; VOLTAGE CONTROL;

CHARGE FLUCTUATION; ELECTROSTATIC POTENTIAL; ENERGY RELAXATION; QUANTUM DOT DEVICES;

ELECTRON TUNNELING;

EID: 4344619979     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1777802     Document Type: Article

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