Electroless deposition of NiWB alloy on p-type Si(1 0 0) for NiSi contact metallization

Electrochimica Acta

Volumn 54, Issue 25, 2009, Pages 6036-6041

  Duhin, A ^a   Sverdlov, Y ^a   Feldman, Y ^b   Shacham Diamand, Y ^a  

^a TEL AVIV UNIVERSITY   (Israel)

^b WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

APTS; Electroless plating; NiSi; NiWB; SAM

Indexed keywords

ALLOY DEPOSITION; AMINOPROPYLTRIETHOXYSILANE; ANNEALING TEMPERATURES; APTS; CONTACT METALLIZATION; DIMETHYLAMINE-BORANE; ELECTROLESS; ELECTROLESS DEPOSITION; IN-VACUUM; MAXIMUM VALUES; NISI; NIWB; NOVEL METHODS; P-TYPE SI; SAM; SI SUBSTRATES; SILICIDE LAYERS; TUNGSTEN IONS;

ALKALI METALS; ANNEALING; ELECTROLESS PLATING; METAL IONS; PALLADIUM; SILICIDES; SILICON; TUNGSTEN; X RAY DIFFRACTION;

SILICON ALLOYS;

EID: 69249109643     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2009.01.062     Document Type: Article

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