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Journal of Applied Physics

Volumn 106, Issue 3, 2009, Pages

The effect of oxygen during irradiation of silicon with low energy Cs + ions

(2) Berghmans, B a,b Vandervorst, W a,b

a KU LEUVEN (Belgium)

b IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYSIS SURFACE; CESIUM IONS; DESORPTION CHARACTERISTICS; EFFECT OF OXYGEN; ENERGY DISTRIBUTIONS; EXPERIMENTAL DATA; FULL OXIDATION; LOW ENERGIES; PRIMARY IONS; RETENTION CAPACITY; SECONDARY ION YIELD; SILICON SURFACES; SPUTTERED SURFACES; SPUTTERING YIELDS; TIME FRAME; ULTRA LOW ENERGY;

CESIUM; DEPTH PROFILING; DESORPTION; IONS; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SILICON; SPUTTERING; SURFACE ANALYSIS;

CESIUM COMPOUNDS;

EID: 69149105064 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3190526 Document Type: Article

Times cited : (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.