Toward accurate in-depth profiling of As and P ultra-shallow implants by SIMS

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 640-644

  Merkulov, A ^a   De Chambost, E ^a   Schuhmacher, M ^a   Peres, P ^a  

^a CAMECA   (United States)

Author keywords

Arsenic; Depth profile; Ion beam induced transient effect; Phosphorus; SIMS

Indexed keywords

ARSENIC; INTERFACES (MATERIALS); ION IMPLANTATION; NEGATIVE IONS; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; SPUTTERING; SURFACE ROUGHNESS;

DEPTH PROFILE; ION BEAM INDUCED TRANSIENT EFFECTS; MONOATOMIC NEGATIVELY CHARGED IONS;

SURFACE CHEMISTRY;

EID: 2942627427     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.130     Document Type: Conference Paper

References (5)

1. G.A. Cooke, M.G. Dowsett, T.J. Ormsby, D.P. Chu, A.J. Puddick, in: Proceedings of the Fifth International Workshop on the Measurement, Characterization and Modeling of Ultra-shallow Doping in Semiconductors, Research Triangle Park, NC, USA, 1999, pp. 225-230.
2. P.A. Ronsheim, R.J. Murphy, in: Proceedings of the Fifth International Workshop on the Measurement, Characterization and Modeling of Ultra-Shallow Doping in Semiconductors, Research Triangle Park, NC, USA, 1999, pp. 126-128.
3. A. Merkulov, F. Desse, M. Schuhmacher, in: Proceedings of the Third European Workshop on SIMS, 2002, p. 52.
4. E. de Chambost, A. Merkulov, M. Schuhmacher, P. Peres, J. Vac. Sci. Technol. B 22(1), Jan/Feb 2004.
5. Kataoka Y., Shigeno M., Tada Y., Witmaack K. Appl. Surf. Sci. 203/204:2003;329-334.