Palladium-induced lateral crystallization of amorphous-germanium thin film on insulating substrate

Electrochemical and Solid-State Letters

Volumn 12, Issue 7, 2009, Pages

  Xie, Ruilong ^a,b   Phung, Thanh Hoa ^a   Yu, Mingbin ^b   Oh, Sue Ann ^c   Tripathy, Sudhiranjan ^c   Zhu, Chunxiang ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; FULL-WIDTH AT HALF-MAXIMUM; GE FILMS; GE THIN FILMS; INSULATING SUBSTRATES; LATERAL GROWTH; MICRO-RAMAN; PROMISING MATERIALS; ROOM TEMPERATURE; SI-BASED; THREE DIMENSIONAL INTEGRATED CIRCUITS;

ANNEALING; BUILDING MATERIALS; CRYSTALLIZATION; GERMANIUM; INTEGRATED CIRCUITS; PALLADIUM; SILICON COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS FILMS;

EID: 69149104279     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3126496     Document Type: Article

References (23)

1. J. -H. Park, M. Tada, D. Kuzum, P. Kapur, H. -Y. Yu, H. -S. Philip Wong, and K. C. Saraswat, Tech. Dig.-Int. Electron Devices Meet. 0163-1918, 2008, 389.
2. J. F. Liu, J. Michel, W. Giziewicz, D. Pan, K. Wada, D. D. Cannon, S. Jongthammanurak, D. T. Danielson, L. C. Kimerling, J. Chen, Appl. Phys. Lett. 0003-6951, 87, 103501 (2005). 10.1063/1.2037200 (Pubitemid 41277473)
3. G. Masini, L. Colace, and G. Assanto, Opt. Mater. (Amsterdam, Neth.) 0925-3467, 17, 243 (2001). 10.1016/S0925-3467(01)00085-4
4. Y. Liu, M. D. Deal, and J. D. Plummer, Appl. Phys. Lett. 0003-6951, 84, 2563 (2004). 10.1063/1.1691175
5. H. Watakabe, T. Sameshima, H. Kanno, T. Sadoh, and M. Miyao, J. Appl. Phys. 0021-8979, 95, 6457 (2004). 10.1063/1.1707216
6. I. Tsunoda, A. Kenjo, T. Sadoh, and M. Miyao, Appl. Surf. Sci. 0169-4332, 224, 231 (2004). 10.1016/j.apsusc.2003.08.051
7. F. Katsuki, K. Hanafusa, M. Yonemura, T. Koyama, and M. Doi, J. Appl. Phys. 0021-8979, 89, 4643 (2001). 10.1063/1.1359149
8. H. Kanno, K. Toko, T. Sadoh, and M. Miyao, Appl. Phys. Lett. 0003-6951, 89, 182120 (2006). 10.1063/1.2374849 (Pubitemid 44705710)
9. B. Hekmatshoar, S. Mohajerzadeh, D. Shahrjerdi, and M. D. Robertson, Appl. Phys. Lett. 0003-6951, 85, 1054 (2004). 10.1063/1.1779946
10. J. -H. Park, P. Kapur, K. C. Saraswat, and H. Peng, Appl. Phys. Lett. 0003-6951, 91, 143107 (2007). 10.1063/1.2793183 (Pubitemid 47531550)
11. S. Gaudet, C. Detavernier, A. J. Kellock, P. Desjardins, and C. Lavoie, J. Vac. Sci. Technol. A 0734-2101, 24, 474 (2006). 10.1116/1.2191861
12. H. Kanno, I. Tsunoda, A. Kenjo, T. Sadoh, and M. Miyao, Appl. Phys. Lett. 0003-6951, 82, 2148 (2003). 10.1063/1.1564298
13. Y. -S. Kim, M. -S. Kim, and S. -K. Joo, J. Electrochem. Soc. 0013-4651, 153, H19 (2006). 10.1149/1.2138673 (Pubitemid 43088991)
14. Z. Chen, S. Zhang, S. Tan, and Z. Wu, Mater. Sci. Eng., A 0921-5093, 373, 21 (2004). 10.1016/j.msea.2003.11.032 (Pubitemid 38641308)
15. Y. Sasaki and C. Horie, Phys. Rev. B 0163-1829, 47, 3811 (1993). 10.1103/PhysRevB.47.3811
16. T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. O. Lo, N. Balasubramanian, D. L. Kwong, and S. Tripathy, Appl. Phys. Lett. 0003-6951, 90, 092108 (2007). 10.1063/1.2709993 (Pubitemid 46355710)
17. J. Zi, K. Zhang, and X. Xie, Prog. Surf. Sci. 0079-6816, 54, 69 (1997). 10.1016/S0079-6816(97)00002-6
18. CRC Handbook of Chemistry and Physics, CRC, Boca Raton (2003).
19. F. Cerdeira, C. J. Buchenauer, F. H. Pollak, and M. Cardona, Phys. Rev. B 0163-1829, 5, 580 (1972). 10.1103/PhysRevB.5.580
20. G. Kartopu, A. V. Sapelkin, V. A. Karavanskii, U. Serincan, and R. Turan, J. Appl. Phys. 0021-8979, 103, 113518 (2008). 10.1063/1.2924417
21. S. Guha, M. Wall, and L. L. Chase, Nucl. Instrum. Methods Phys. Res. B 0168-583X, 147, 367 (1999). 10.1016/S0168-583X(98)00578-3
22. A. Hiraki, J. Electrochem. Soc. 0013-4651, 127, 2662 (1980). 10.1149/1.2129568
23. J. Wang, M. Li, and E. I. Altman, J. Appl. Phys. 0021-8979, 100, 113501 (2006). 10.1063/1.2369639 (Pubitemid 46012132)