Surface excitation parameter for 12 semiconductors and determination of a general predictive formula

Surface and Interface Analysis

Volumn 41, Issue 9, 2009, Pages 735-740

  Pauly, N ^a   Tougaard, S ^b  

^a UNIVERSITÉ LIBRE DE BRUXELLES   (Belgium)

^b UNIVERSITY OF SOUTHERN DENMARK   (Denmark)

Author keywords

Semiconductor; Surface excitation parameter

Indexed keywords

DIELECTRIC FUNCTIONS; DIELECTRIC RESPONSE THEORY; ELECTRON ENERGIES; ENERGY BANDGAPS; ENERGY-LOSS SPECTROSCOPY; EXCITATION PROBABILITIES; GAAS; INAS; INELASTIC ELECTRON SCATTERING; INP; PLASMON ENERGY; SEMICONDUCTOR; SURFACE EXCITATION PARAMETER; SURFACE EXCITATION PARAMETERS; SURFACE NORMALS;

DIELECTRIC MATERIALS; ELECTRON ENERGY ANALYZERS; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; GERMANIUM; INDIUM ARSENIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTING GERMANIUM; SILICON CARBIDE; SURFACES; ZINC SULFIDE;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 68949202893     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.3081     Document Type: Article

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