Quantification of surface excitation effects on the EPES-determined IMFPs for GaN and SiC

Surface and Interface Analysis

Volumn 40, Issue 3-4, 2008, Pages 725-727

  Krawczyk, Miroslaw ^a  

^a INSTITUTE OF PHYSICAL CHEMISTRY   (Poland)

Author keywords

Electron IMFP; GaN; Quantitative surface analysis; SiC; Surface excitation correction; Surface excitation parameter

Indexed keywords

BACKSCATTERING; ELECTRON SPECTROSCOPY; GALLIUM NITRIDE; SILICON NITRIDE;

QUANTITATIVE SURFACE ANALYSIS~; SURFACE EXCITATION CORRECTION; SURFACE EXCITATION PARAMETER;

SURFACE ANALYSIS;

EID: 42449148008     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2698     Document Type: Conference Paper

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