Experimental determination of electron inelastic scattering cross-sections in Si, Ge and III-V semiconductors

Vacuum

Volumn 71, Issue 1-2 SPEC., 2003, Pages 147-152

  Orosz, G T ^a   Gergely, G ^a   Gurban, S ^a   Menyhard, M ^a   Toth, J ^b   Varga, D ^b   Tougaard, S ^c  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b INSTITUTE OF NUCLEAR RESEARCH ATOMKI   (Hungary)

^c UNIVERSITY OF SOUTHERN DENMARK   (Denmark)

Author keywords

Electron elastic; Inelastic scattering; Surface excitation

Indexed keywords

COMPUTER SIMULATION; ELECTRON SCATTERING; MONTE CARLO METHODS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE PHENOMENA;

INELASTIC SCATTERING;

SEMICONDUCTING SILICON;

EID: 0037427408     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00729-7     Document Type: Conference Paper

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