Low power and high speed phase-change memory devices with silicon-germanium heating layers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 4, 2007, Pages 1244-1248

  Lee, Seung Yun ^a   Yoon, Sung Min ^a   Park, Young Sam ^a   Yu, Byoung Gon ^a   Kim, Sang Hoon ^a   Lee, Sang Heung ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; MOS DEVICES; PHASE TRANSITIONS; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS;

METAL OXIDE SEMICONDUCTOR TECHNOLOGY; RELIABILITY DEGRADATION; SIGE HEATING LAYERS;

DATA STORAGE EQUIPMENT;

EID: 34547582608     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2752515     Document Type: Article

References (14)

1. R. Bez, Microelectron. Eng. 80, 249 (2005).
2. S. J. Ahn, et al., 2005 Symposium on VLSI Technology, Digest of Technical Papers, p. 98.
3. A. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, S. Hudgens, and R. Bez, Tech. Dig. - Int. Electron Devices Meet. 2003, 29.6.1.
4. S.-M. Yoon, et al., IEEE Electron Device Lett. 27, 445 (2006).
5. Y. C. Chen, et al., Tech. Dig. - Int. Electron Devices Meet. 2006, 30.3.1.
6. S.-Y. Lee, et al., Appl. Phys. Lett. 89, 053517 (2006).
7. S.-Y. Lee and C. W. Park, Solid-State Electron. 50, 333 (2006).
8. M. Takashiri, T. Borca-Tasciuc, A. Jacquot, K. Miyazaki, and G. Chen, J. Appl. Phys. 100, 054315 (2006).
9. A. Chaiken, et al., Jpn. J. Appl. Phys., Part 1 45, 2580 (2003).
10. R. M. Rose, L. A. Shepard, and J. Wulff, The Structure and Properties of Materials (Wiley, New York, 1966), Vol. 4, p. 166.
11. H.-M. Chuang, K.-B. Thei, S.-F. Tsai, and W.-C. Liu, IEEE Trans. Electron Devices 50, 1413 (2003).
12. D. Adler, J. Vac. Sci. Technol. 10, 728 (1973).
13. A. Pirovano, A. Redaelli, F. Pellizzer, F. Ottogalli, M. Tosi, D. Ielmini, A. L. Lacaita, and R. Bez, IEEE Trans. Device Mater. Reliab. 4, 422 (2004).
14. S.-M. Yoon, N.-Y. Lee, S.-O. Ryu, Y.-S. Park, S.-Y. Lee, K.-J. Choi, and B.-G. Yu, Jpn. J. Appl. Phys., Part 2 44, L869 (2005).