Threshold voltage model for mesa-isolated small geometry fully depleted SOI MOSFETs based on analytical solution OF 3-D poisson's equation

IEEE Transactions on Electron Devices

Volumn 51, Issue 7, 2004, Pages 1169-1177

  Katti, Guruprasad ^a   DasGupta, Nandita ^b   DasGupta, Amitava ^c  

^a GE GLOBAL RESEARCH   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^c IEEE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BISECTION METHOD; CAPACITANCE VOLTACE EXTRACTION; LAPLACE EQUATION; SMALL GEOMETRY;

BOUNDARY CONDITIONS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIFFERENTIATION (CALCULUS); MATHEMATICAL MODELS; POISSON EQUATION; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 4344708136     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.830648     Document Type: Article

References (22)

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