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Chinese Physics Letters

Volumn 23, Issue 2, 2006, Pages 497-499

AlGaN/GaN HEMTs with an insulated gate fabricated by inductively coupled plasma oxidization

(4) Hao, Zhi Biao a Guo, Tian Yi a Zhang, Li Chong a Luo, Yi a

a TSINGHUA UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; FABRICATION; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; INDUCTIVELY COUPLED PLASMA; LEAKAGE CURRENTS; PLASMA APPLICATIONS; SEMICONDUCTOR ALLOYS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALGAN LAYERS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; GATE DEVICES; INDUCTIVELY-COUPLED; INDUCTIVELY-COUPLED PLASMA; INSULATED GATE; PLASMA OXIDIZATION; PLASMA TREATMENT; SPECTROSCOPY MEASUREMENTS; THIN OXIDIZED LAYERS;

ALUMINUM GALLIUM NITRIDE;

EID: 31744431802 PISSN: 0256307X EISSN: 17413540 Source Type: Journal
DOI: 10.1088/0256-307X/23/2/062 Document Type: Article

Times cited : (9)

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