High electron mobility enhancement on (110) surface due to uniaxial strain and its impact on short channel device performance of SOl FinFETs

IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Volumn , Issue , 2008, Pages

  Irisawa, T ^a   Okano, K ^a   Horiuchi, T ^a   Itokawa, H ^a   Mizushima, I ^a   Usuda, K ^a   Tezuka, T ^a   Sugiyama, N ^a   Takagi, S ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FINFETS; GATE LENGTH; HIGH ELECTRON MOBILITY; LOW-PARASITIC; SHORT-CHANNEL DEVICES; SUB-BANDS; UNI-AXIAL STRAINS; UNIAXIAL TENSILE STRAIN;

ELECTRON MOBILITY; ELECTRONS; NANOELECTRONICS; SOLS;

TENSILE STRAIN;

EID: 77950019274     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SNW.2008.5418443     Document Type: Conference Paper

References (6)

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3. N. Collaert et al, VLSI Symp.,80 (2006).
4. W. Xiong et al., IEEE EDL. 27, 612 (2006).
5. T. Irisawa et al., IEDM Tech. Dig., 725 (2005).
6. T. Tezuka et al., Appl. Phys. Lett. 90, 181918 (2007).