Study of charge collection efficiency in 4H-SiC Schottky diodes with 12C ions

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 608, Issue 1, 2009, Pages 80-85

  De Napoli, M ^a,b   Giacoppo, F ^b,c   Raciti, G ^a,d   Rapisarda, E ^a,d  

^a UNIVERSITY OF CATANIA   (Italy)

^b INFN LABORATORI NAZIONALI DEL SUD   (Italy)

^c UNIVERSITY OF MESSINA   (Italy)

^d INFN SEZIONE DI CATANIA   (Italy)

Author keywords

Radiation detectors; Semiconductors; SiC silicon carbide

Indexed keywords

ANALYTICAL EQUATIONS; BEST FIT; CHARGE COLLECTION EFFICIENCY; DEPLETION REGION; DOPING CONCENTRATION; MINORITY CARRIER; MINORITY CARRIERS DIFFUSION LENGTH; NEUTRAL REGION; REVERSE BIAS; SCHOTTKY DIODES; SEMICONDUCTOR SUBSTRATE; SEMICONDUCTORS; SIC SCHOTTKY DIODE; SIC-SILICON CARBIDE;

CHARGE CARRIERS; HEAVY IONS; RADIATION DAMAGE; RADIATION DETECTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SILICON CARBIDE; SILICON DETECTORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 68349128326     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2009.06.018     Document Type: Article

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