Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 222-225

  Gaubas, E ^a   Vanhellemont, J ^b   Simoen, E ^c   Romandic, I ^d   Geens, W ^d   Clauws, P ^b  

^a VILNIUS UNIVERSITY   (Lithuania)

^b GHENT UNIVERSITY   (Belgium)

^c IMEC   (Belgium)

^d UMICORE   (Belgium)

Author keywords

Carrier lifetime; Germanium; Metals; Microwave absorption; Silicon

Indexed keywords

CARRIER LIFETIME; DOPING (ADDITIVES); EXCITATION ENERGY; GERMANIUM COMPOUNDS; MATHEMATICAL MODELS;

DOPING CONCENTRATION; MICROWAVE ABSORPTION; SHOCKLEY READ HALL MODEL; THRESHOLD;

SILICON COMPOUNDS;

EID: 36049049802     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.08.151     Document Type: Article

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