Effect of nano-patterning of p-GaN cladding layer on photon extraction efficiency

Solid-State Electronics

Volumn 53, Issue 10, 2009, Pages 1099-1102

  Hong, Eun Ju ^a   Byeon, Kyeong Jae ^a   Park, Hyoungwon ^a   Hwang, Jaeyeon ^a   Lee, Heon ^a   Choi, Kyungwoo ^b   Kim, Hyeong Seok ^c  

^a Korea University   (South Korea)

^b Korea Institute of Nuclear Safety (KINS)   (South Korea)

^c Chung Ang University   (South Korea)

Author keywords

GaN; Green LED; Nano pattern; Nanoimprint lithography; Photoluminescence; Photon extraction efficiency

Indexed keywords

CLADDING LAYER; EMISSION INTENSITY; ETCH MASK; GAN; GAN LAYERS; GREEN LED; GREEN LEDS; LED STRUCTURE; LUMINESCENCE INTENSITY; NANO-PATTERN; NANOPATTERNING; PHOTON EXTRACTION EFFICIENCY; SUBMICRON; TOTAL INTERNAL REFLECTIONS; UV NANOIMPRINT LITHOGRAPHY;

GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; NANOIMPRINT LITHOGRAPHY; PHOTOLUMINESCENCE; PHOTONS; REACTIVE ION ETCHING; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM COMPOUNDS; SILICON COMPOUNDS;

EXTRACTION;

EID: 68349125558     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.05.007     Document Type: Article

References (19)

1. Huang H.-W., Kao C.C., Chu J.T., Kuo H.C., Wang S.C., and Yu C.C. Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface. IEEE Photon Technol Lett 17 (2005) 983-985
2. Lee T.-X., Gao K.-F., Chein W.-T., and Sun C.-C. Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate. Opt Exp 15 (2007) 6670-6676
3. Fujii T., Gao Y., Sharma R., Hu E.L., DenBaars S.P., and Nakamura S. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. Appl Phys Lett 84 (2004) 855-857
4. Byeon K.-.J., Hwang S.-.Y., and Lee H. Fabrication of two-dimensional photonic crystal patterns on GaN-based light-emitting diodes using thermally curable monomer-based nanoimprint lithography. Appl Phys Lett 91 (2007) 091106-3
5. Oder T.N., Kim K.H., Lin J.Y., and Jiang H.X. III-nitride blue and ultraviolet photonic crystal light emitting diodes. Appl Phys Lett 84 (2004) 466-468
6. Kim D.-.H., Cho C.-.O., Roh Y.-.G., Jeon H., Park Y.S., Cho J., et al. Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns. Appl Phys Lett 87 (2005) 203508-3
7. Huh C., Lee K.-.S., Kang E.-.J., and Park S.-.J. Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface. J Appl Phys 93 (2003) 9383-9385
8. Ono H., Onoi Y., Kasahara K., Mizuno J., and Shoji S. Fabrication of high-intensity light-emitting diodes using nanostructures by ultraviolet nanoimprint lithography and electrodeposition. Jpn J Appl Phys 49 (2008) 933-935
9. Song J.-.O., Leem D.-.S., Kwak J.S., Park Y., Chae S.W., and Seong T.-.Y. Improvement of the luminous intensity of light-emitting diodes by using highly transparent Ag-indium tin oxide p-type ohmic contacts. IEEE Photon Technol Lett 17 (2005) 291-293
10. Lee Y.J., and Kuo H.C. Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with v-shaped pits roughening surfaces. J Lightwave Technol 26 (2008) 1455-3
11. Wang C.-.C., Ku H., Liu C.-.C., Chong K.-.K., Hung C.-.I., Wang Y.-.H., et al. Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure. Appl Phys Lett 91 (2007) 121109-3
12. Cuong T.V., Cheong H.S., Kim H.G., Hong C.-.H., and Suh E.K. Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning. Appl Phys Lett 90 (2007) 131107-3
13. Ichikawa H., and Baba T. Efficiency enhancement in a light-emitting diode with a two-dimensional surface grating photonic crystal. Appl Phys Lett 84 (2004) 457-459
14. Lee H., and Jung G.-.Y. Wafer to wafer nano-imprinting lithography with monomer based thermally curable resin. Microelectron Eng 77 (2004) 168-4
15. Lee H., and Jung G.-.Y. UV curing nanoimprint lithography for uniform layers and minimized residual layers. Jpn J Appl Phys 43 (2004) 8369-3
16. Hahn Y.B., Choi R.J., Hong J.H., Park H.J., Choi C.S., and Lee H.J. High-density plasma-induced etch damage of InGaN/GaN multiple quantum well light-emitting diodes. J Appl Phys 92 (2002) 1189-4
17. Lee J.-.M., Huh C., Kim D.-.J., and Park S.-.J. Dry-etch damage and its recovery in InGaN/GaN multi-quantum-well light-emitting diodes. Semicond Sci Technol 18 (2003) 530-534
18. Lee J.-.M., Chang K.-.M., Kim S.-.W., Huh C., Lee I.-.H., and Park S.-.J. Dry etch damage in n-type GaN and its recovery by treatment with an N2 plasma. J Appl Phys 87 (2000) 7667-0
19. Hong H.-Gi., Kim S.-.S., Kim D.-.Y., Lee T., Kim K.-.K., Song J.-.O., et al. Recovery of dry etch-induced damage of nano-patterned GaN-based light-emitting diodes by rapid-thermal-annealing. Phys Status Solidi 204 (2007) 881-886