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Volumn 517, Issue 23, 2009, Pages 6371-6374

Analysis of self-heating related instability in n-channel polysilicon thin film transistors fabricated on polyimide

Author keywords

Polyimide; Polysilicon TFTs; Self heating instability

Indexed keywords

3-DIMENSIONAL; ACTIVE LAYER; ELECTRICAL INSTABILITY; GATE INSULATOR; INSULATING SUBSTRATES; INTERFACE STATE; N-CHANNEL; NUMERICAL SIMULATION; OPERATING CONDITION; PLASTIC SUBSTRATES; POLY-SI TFTS; POLYSILICON THIN FILM TRANSISTORS; SELF-HEATING; SELF-HEATING INSTABILITY; SI-H BONDS; TRANSPORT MODELS;

EID: 68349107004     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.105     Document Type: Article
Times cited : (22)

References (21)
  • 15
    • 33846159488 scopus 로고    scopus 로고
    • Dependence of Self-Heating Effects on Width/Length Dimension in p-type Polycrystalline Silicon Thin Film Transistors
    • digest
    • S.-W. Lee, Y.-J. Kim, S.-J. Park, H. Kang, C.-Y. Kim, C.-D. Kim, I.-J. Chung, "Dependence of Self-Heating Effects on Width/Length Dimension in p-type Polycrystalline Silicon Thin Film Transistors" IMID 06 digest (2006).
    • (2006) IMID 06
    • Lee, S.-W.1    Kim, Y.-J.2    Park, S.-J.3    Kang, H.4    Kim, C.-Y.5    Kim, C.-D.6    Chung, I.-J.7
  • 20
    • 0141829732 scopus 로고    scopus 로고
    • Inoue S., Takenaka S., and Shimoda T. Study of Degradation Phenomenon Due to a Combination of Contamination and Self-Heating in Poly-Si Thin Film Transistors Fabricated by a Low-Temperature Process. Jpn. J. Appl. Phys. vol. 42 (2003) 4213
    • (2003) Jpn. J. Appl. Phys. , vol.42 , pp. 4213
    • Inoue, S.1    Takenaka, S.2    Shimoda, T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.