Electrical stability in self-aligned p-channel polysilicon thin film transistors

Thin Solid Films

Volumn 515, Issue 19 SPEC. ISS., 2007, Pages 7571-7575

  Gaucci, P ^a   Mariucci, L ^a   Valletta, A ^a   Pecora, A ^a   Fortunato, G ^a   Templier, F ^b  

^a IFN CNR   (Italy)

^b CEA LETI   (France)

Author keywords

Polycrystalline silicon (poly Si); Self heating; Semiconductor device simulation; Stability; Thin film transistors (TFTs)

Indexed keywords

ANNEALING; EXCIMER LASERS; ION IMPLANTATION; THERMODYNAMIC STABILITY; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

SELF-HEATING; SEMICONDUCTOR DEVICE SIMULATION; TEMPERATURE STRESS;

POLYSILICON;

EID: 34547585559     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.11.090     Document Type: Article

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