Negative bias-temperature stress in non-self-aligned p-channel polysilicon TFTs

Thin Solid Films

Volumn 517, Issue 23, 2009, Pages 6379-6382

  Mariucci, L ^a   Gaucci, P ^a   Valletta, A ^a   Cuscuna M ^a   Maiolo, L ^a   Pecora, A ^a   Fortunato, G ^a  

^a CNR   (Italy)

Author keywords

Electrical stability; Interface states; Negative bias stress instability; Polysilicon TFT; Self heating

Indexed keywords

BIAS STRESS; ELECTRIC FIELD DEPENDENCE; ELECTRICAL INSTABILITY; ELECTRICAL STABILITY; GATE BIAS; INTERFACE STATE; INTERFACE STATES; NEGATIVE BIAS; NEGATIVE BIAS STRESS INSTABILITY; NUMERICAL SIMULATION; OUTPUT CHARACTERISTICS; SELF-ALIGNED; SELF-HEATING; SPATIAL DISTRIBUTION; TRANSFER CHARACTERISTICS; TRANSVERSE ELECTRIC FIELD; UNIFORM INTERFACE;

COMPUTER SIMULATION LANGUAGES; ELECTRIC FIELDS; HEATING; POLYSILICON; SIZE DISTRIBUTION; THIN FILM TRANSISTORS;

STABILITY;

EID: 68349105100     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.089     Document Type: Article

References (15)

1. Kimura M., Yudasaka I., Kanbe S., Kobayashi H., Kiguchi H., Seki S.-i., Miyashita S., Shimoda T., Ozawa T., Kitawada K., Nakazawa T., Miyazawa W., and Ohshima H. IEEE Trans. Electron Devices 46 (1999) 2282
2. Cheon J.H., Choi J.H., Hur J.H., Jang J., Shin H.S., Jeong J.K., Mo Y.G., and Chung H.K. IEEE Trans. Electron Devices 53 (2006) 1273
3. Uraoka Y., Morita Y., Yano H., Hatayama T., and Fuyuki T. Jpn. J. Appl. Phys. 41 (2002) 5894
4. Mariucci L., Valletta A., Gaucci P., and Fortunato G. Appl. Phys. Lett. 89 (2006) 183518
5. Hashimoto S., Uraoka Y., Fuyuki T., and Morita Y. Jpn. J. Appl. Phys. 45 (2006) 7
6. Maeda S., Maegawa S., Ipposhi T., Nishimura H., Muragishi T., Inoue Y., Nishimura T., Ichiki T., Mitsuhashi J., and Ashida M. J. Appl. Phys. 76 (1994) 8160
7. Chen C.-Y., Lee J.-W., Wang S.-D., Shieh M.-S., Lee P.-H., Chen W.-C., Lin H.-Y., Yeh K.-L., and Lei T.-F. IEEE Trans. Electron Devices 53 (2006) 2993
8. Schroder D.K., and Babcock J.A. J. Appl. Phys. 94 (2003) 1
9. Stathis J.H., and Zafar S. Microelectron. Reliab. 46 (2006) 270
10. Liu C.-H., Lee M.T., Lin C.-Y., Chen J., Loh Y.T., Liou F.-T., Schruefer K., Katsetos A.A., Yang Z., Rovedo N., Hook T.B., Wann C., and Chen T.-C. Jpn J. Appl. Phys. 41 (2002) 2423
11. Reddy V., Krishnan A.T., Marshall A., Rodriguez J., Natarajan S., Rost T., and Krishnan S. IEEE Int. Rel. Symp. 40 (2002) 248
12. Brotherton S.D., McCulloch D.J., Gowers J.P., Ayres J.R., and Trainor M.J. J. Appl. Phys. 82 (1997) 4086
13. Ogawa S., Shimaya M., and Shiono N. J. Appl. Phys. 77 (1995) 1137
14. Fortunato G., and Migliorato P. J. Appl. Phys. 68 (1990) 2463
15. Valletta A., Moroni A., Mariucci L., Bonfiglietti A., and Fortunato G. Appl. Phys. Lett. 89 (2006) 093509